A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures
نویسندگان
چکیده
The double gate MOSFET architecture has been proposed as a possible solution to allow the scaling of MOSFETs to the sub-30 nm regime, particularly due to its inherent resistance to short-channel effects. The use of lightly doped, or even undoped, channels means that such devices should be inherently resistant to random dopant induced fluctuations which will be one of the major obstacles to MOSFET scaling towards the end of the Si Roadmap. Random dopants within the channel are not, however, the only source of intrinsic fluctuations within MOSFETs at this scale. In this paper we investigate the impact of discrete dopants in the source and drain, individual charges within the active region and line edge roughness on the intrinsic parameter fluctuations in double gate MOSFETs.
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